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EPITAXIAL GROWTH OF DEFECT-FREE, WAFER-SCALE SINGLE-LAYER GRAPHENE ON THIN FILMS OF COBALT
EPITAXIAL GROWTH OF DEFECT-FREE, WAFER-SCALE SINGLE-LAYER GRAPHENE ON THIN FILMS OF COBALT
A method for depositing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate is provided. Due to the strong adhesion of graphene and cobalt to a semiconductor substrate, the layer of graphene is epitaxially deposited.
Original Text (This is the original text for your reference.)
A method for depositing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate is provided. Due to the strong adhesion of graphene and cobalt to a semiconductor substrate, the layer of graphene is epitaxially deposited.
Inventor: Vikas Berry;Sanjay Behura;Phong Nguyen;Michael R. Seacrist
Application number: US15764370
Publication number: US20180315599A1
Filing date: 2016-09-28
Publication date: 2020-05-25
Type of Patent: A1
Source: IKCEST
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