Implementation of the unipolar barrier detector concept in HgCdTe-based compound semiconductor alloys is a challenging problem, primarily because practical lattice-matched materials that can be employed as the wide bandgap barrier layer in HgCdTe nBn structures present a significant valence band offset at the n-type/barrier interface, thus impeding the free flow of photogenerated minority carriers. However, it is possible to minimize the valence band offset by replacing the bulk HgCdTe alloy-based barrier with a CdTe-HgTe superlattice barrier structure. In this paper, an 8 × 8 k.p Hamiltonian combined with the nonequilibrium Green's function formalism has been employed to numerically demonstrate that the single-band effective mass approximation is an adequate numerical approach, which is valid for the modeling, design, and optimization of band alignment and carrier transport in HgCdTe-based nBn detectors incorporating a wide bandgap superlattice barrier.

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ntypebarrier free flow of photogenerated minority carriers however unipolar barrier detector concept nonequilibrium greens function formalism singleband effective mass approximation latticematched materials hgcdte nbn structures cdtehgte superlattice barrier modeling design and optimization of band alignment and carrier transport in hgcdtebased nbn detectors valence band offset compound semiconductor alloys bulk hgcdte alloybased barrier kp hamiltonian

Nima Dehdashti Akhavan,.Superlattice Barrier HgCdTe nBn Infrared Photodetectors: Validation of the Effective Mass Approximation. 63 (12),4811-4818.

Nima Dehdashti Akhavan,"Superlattice Barrier HgCdTe nBn Infrared Photodetectors: Validation of the Effective Mass Approximation" 63

Nima Dehdashti Akhavan,"Superlattice Barrier HgCdTe nBn Infrared Photodetectors: Validation of the Effective Mass Approximation"