Language
We detect your regional language is French. Do you want to change site's language to French? You may choose other languages.International
English
中文
русск
français
español
العربية
User Center
My Training Class
Feedback
Nanomaterials | Vol.9, Issue.10 | | Pages
Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells
In this study, needle-like and pyramidal hybrid black silicon structures were prepared by performing metal-assisted chemical etching (MACE) on alkaline-etched silicon wafers. Effects of the MACE time on properties of the black silicon wafers were investigated. The experimental results showed that a minimal reflectance of 4.6% can be achieved at the MACE time of 9 min. The height of the nanostructures is below 500 nm, unlike the height of micrometers needed to reach the same level of reflectance for the black silicon on planar wafers. A stacked layer of silicon nitride (SiNx) grown by inductively-coupled plasma chemical vapor deposition (ICPCVD) and aluminum oxide (Al2O3) by spatial atomic layer deposition was deposited on the black silicon wafers for passivation and antireflection. The 3 min MACE etched black silicon wafer with a nanostructure height of less than 300 nm passivated by the SiNx/Al2O3 layer showed a low surface recombination rate of 43.6 cm/s. Further optimizing the thickness of ICPCVD-SiNx layer led to a reflectance of 1.4%. The hybrid black silicon with a small nanostructure size, low reflectance, and low surface recombination rate demonstrates great potential for applications in optoelectronic devices.
Original Text (This is the original text for your reference.)
Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells
In this study, needle-like and pyramidal hybrid black silicon structures were prepared by performing metal-assisted chemical etching (MACE) on alkaline-etched silicon wafers. Effects of the MACE time on properties of the black silicon wafers were investigated. The experimental results showed that a minimal reflectance of 4.6% can be achieved at the MACE time of 9 min. The height of the nanostructures is below 500 nm, unlike the height of micrometers needed to reach the same level of reflectance for the black silicon on planar wafers. A stacked layer of silicon nitride (SiNx) grown by inductively-coupled plasma chemical vapor deposition (ICPCVD) and aluminum oxide (Al2O3) by spatial atomic layer deposition was deposited on the black silicon wafers for passivation and antireflection. The 3 min MACE etched black silicon wafer with a nanostructure height of less than 300 nm passivated by the SiNx/Al2O3 layer showed a low surface recombination rate of 43.6 cm/s. Further optimizing the thickness of ICPCVD-SiNx layer led to a reflectance of 1.4%. The hybrid black silicon with a small nanostructure size, low reflectance, and low surface recombination rate demonstrates great potential for applications in optoelectronic devices.
+More
optoelectronic devices black silicon wafers nanostructure height reflectance surface recombination rate sinsubxsubalsub2subosub3sub icpcvdsinsubxsub nanostructures alkalineetched atomic layer deposition hybrid black silicon metalassisted chemical etching mace time needlelike inductivelycoupled plasma chemical vapor deposition
APA
MLA
Chicago
Chia-Hsun Hsu,Shih-Mao Liu,Shui-Yang Lien,Xiao-Ying Zhang,Yun-Shao Cho,Yan-Hua Huang,Sam Zhang,Song-Yan Chen,Wen-Zhang Zhu,.Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells. 9 (10),.
Translate engine
Article's language
Action
Report
Share
Recommended articles
Report
Select your report category*
Reason*
Your level privilege is in sufficient. You can go to the “User Center” to view your level information and perform points tasks to upgrade your level.
New sign-in location：
Last sign-in location：
Last sign-in date：
About to jump to an external site.
Security unknown, whether to continue