Due to the constant size reduction, single-donor-based nanowire transistors receive an increasing interest from the semi-conductor industry. In this work we theoretically investigate the coupled influence of electron–phonon scattering, temperature and size (cross-section and channel length) on the properties of such systems. The aim is to determine under what conditions the localized character of the donor has a remarkable impact on the current characteristics. We use a quantum non-equilibrium Green’s function approach in which the acoustic electron–phonon scattering is treated through local self-energies. We first show how this widely used approach, valid at high temperatures, can be extended to lower temperatures. Our simulations predict a hysteresis in the current when reducing the temperature down to 150K. We also find that acoustic phonons degrade the current characteristics while their optical counterparts might have a beneficial impact with an increase of the ON-current. Finally we discuss the influence of nanowire length and cross-section and emphasize the complexity of precisely controlling the dopant level at room temperature.

+More

size nanowire length crosssection optical counterparts acoustic electronphonon scattering quantum nonequilibrium greens function approach localized character donor channel dopant level local selfenergies

H. Carrillo-Nuñez, N. Cavassilas, S. Berrada,M. Bescond, M. Lannoo,.Size and temperature dependence of the electron–phonon scattering by donors in nanowire transistors. 122 (0),1-7.

H. Carrillo-Nuñez, et al."Size and temperature dependence of the electron–phonon scattering by donors in nanowire transistors" 122

H. Carrillo-Nuñez, N. Cavassilas, S. Berrada,M. Bescond, M. Lannoo,"Size and temperature dependence of the electron–phonon scattering by donors in nanowire transistors"