| Vol., Issue. | | Pages 1507-1517
Exploiting Refresh Effect of DRAM Read Operations: A Practical Approach to Low-Power Refresh
Dynamic random access memory (DRAM) requires periodic refresh operations to retain its data. In practice, DRAM retention times are normally distributed from 64 ms to several seconds. However, the conventional refresh method uses 64 ms as the refresh interval, since it applies the same refresh interval to all DRAM rows. Thus, the conventional refresh method results in unnecessary refresh operations (eventually, energy waste) to the DRAM rows whose retention times are longer than 64 ms. In this paper, we propose a practical refresh scheme that exploits refresh effect of DRAM read operations to reduce refresh overhead. Our proposed scheme applies a refresh interval longer than the conventional refresh interval (64 ms) to the DRAM chip. In this case,
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Exploiting Refresh Effect of DRAM Read Operations: A Practical Approach to Low-Power Refresh
Dynamic random access memory (DRAM) requires periodic refresh operations to retain its data. In practice, DRAM retention times are normally distributed from 64 ms to several seconds. However, the conventional refresh method uses 64 ms as the refresh interval, since it applies the same refresh interval to all DRAM rows. Thus, the conventional refresh method results in unnecessary refresh operations (eventually, energy waste) to the DRAM rows whose retention times are longer than 64 ms. In this paper, we propose a practical refresh scheme that exploits refresh effect of DRAM read operations to reduce refresh overhead. Our proposed scheme applies a refresh interval longer than the conventional refresh interval (64 ms) to the DRAM chip. In this case,
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